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| FJC2383 NPN Epitaxial Silicon Transistor July 2005 FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 23 PY 1 83 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25C unless otherwise noted Parameter Ratings 160 160 6 1 0.5 500 150 -55 ~ 150 Units V V V A A mW C C Collector Power Dissipation Junction Temperature Storage Temperature a= Electrical Characteristics T Symbol ICBO IEBO BVCEO hFE VCE (sat) VBE (on) fT Cob 25C unless otherwise noted Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = 150V, IE = 0 VEB = 6V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 200mA IC = 500mA, IB = 50mA VCE = 5V, IC = 5mA VCE = 5V, IC = 200mA VCB = 10V, IE = 0, f = 1MHz Min. Typ. Max. 1 1 Units A A V 160 100 0.45 20 100 20 320 1.5 0.75 V V MHz pF (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJC2383 Rev. B FJC2383 NPN Epitaxial Silicon Transistor hFE Classification Classification hFE O 100 ~ 200 Y 160 ~ 320 Package Marking and Ordering Information Device Marking 2383 Device FJC2383 Package SOT-89 Reel Size 13" Tape Width -- Quantity 4,000 FJC2383 Rev. B 2 www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic 1.4 Figure 2. DC Current Gain 1000 Ic[mA], COLLECTOR CURRENT 1.2 EMITTER COMMON o Ta=25 C IB = 15mA EMITTER COMMON hFE, DC CURRENT GAIN 1.0 IB = 10mA IB = 6mA VCE=10V 100 VCE=5V 0.8 IB = 4mA IB = 3mA IB = 2.5mA IB = 2mA IB = 1.5mA IB = 1mA IB = 0.5mA 0.6 0.4 10 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain 1.0 Figure 4. Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 EMITTER COMMON IC/IB=10 EMITTER COMMON Ta = 25 C o IC[A], COLLECTOR CURRENT 0.8 0.1 0.6 IC/IB=10 IC/IB=5 0.4 0.01 0.2 0.0 0.0 1E-3 0.2 0.4 0.6 0.8 1.0 1 10 100 1000 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage 1.0 Figure 6. Collectro Output Capacitance 1000 EMITTER COMMON IC/IB=10 EMITTER COMMON f = 1MHz Ta = 25 C o IC[A], COLLECTOR CURRENT 0.8 Cob[pF], CAPACITANCE 0.2 0.4 0.6 0.8 1.0 100 0.6 0.4 10 0.2 0.0 0.0 1 1 10 100 1000 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE FJC2383 Rev. B 3 www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) Figure 7. Current Gain Bandwidth Product fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 EMITTER COMMON Ta = 25 C o 100 10 1 1 10 100 1000 IC[mA], COLLECTOR CURRENT FJC2383 Rev. B 4 www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 4.50 0.20 1.65 0.10 C0.2 (0.50) 1.50 0.20 (0.40) 0.20 2.50 0.50 0.10 1.50 TYP 1.50 TYP 0.40 0.10 0.40 +0.10 -0.05 (1.10) 4.10 0.20 Dimensions in Millimeters FJC2383 Rev. B 5 www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 6 FJC2383 Rev. B www.fairchildsemi.com |
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